MCQ on Tunnel Diode: Previous trends reveal that NEET/JEE aspirants find Physics as the most challenging section amongst the other sections. But most of them fail to decipher the reason behind this. This particularly can be as the candidates taking up this examination are predominantly medical aspirants with their subject of interest being Biology. Also, sections like Physics are more on theories, laws, numerical as opposed to Biology which is more of fact-based, life sciences and comprising of substantial explanations.
In this post we are providing you MCQ on Tunnel Diode, which will be beneficial for you in upcoming NEET, AIIMS, JEE, WBJEE, Medical and Engineering Exams.
Q1. In the construction of tunnel diode, why is the pellet soldered to anode contact and a tiny dot to the cathode contact via a mesh screen? a) For heat dissipation and reduce induction respectively
a) For heat dissipation and reduce induction respectively
b) For better conduction and reduce inductance respectively
c) For better conduction and reduce inductance respectively
d) For heat dissipation and increase conduction respectively
Q2. Which among the following is the reason for the depletion layer of the tunnel diode to be very small? b) Dopants are high and it is abrupt
a) Tunneling effect
b) Dopants are high and it is abrupt
c) Uses positive conductance property
d) It’s used at very high-frequency ranges
Q3. What are the materials used to make the Tunnel diode? d) Silicon and germanium materials
a) ZnTe
b) AlGaAs
c) AlGaInP
d) Silicon and germanium materials
Q4. For a tunnel diode, when p is the probability that the carrier crosses the barrier ‘W’ is the width ‘e’ is energy. b) p ∝ e(-A*e*w)
a) p ∝ 1/e(-A*e*w)
b) p ∝ e(-A*e*w)
c) p ∝ 1/e(A*e*w)
d) p ∝ e(A*e*w)
Q5. From the following statements pick the correct statement about tunnel diode.
Statement 1: It uses the property of negative conductance.
Statement 2: In forward bias the fermilevel of p side becomes higher than the n side It operates at high frequency.
a) 1 only c) 1 and 3
b) 2 only
c) 1 and 3
d) 2 and 3
Q6. The tunnel diode is mainly used _______. d) For very high speed of switching
a) For rectification
b) For fact chopping
c) To control the power
d) For very high speed of switching
Q7. Tunnel diode operates very fast in the ______ region.
a) Radio frequency
b) Gamma frequency
c) Ultraviolet frequency
d) Microwave frequency
Q8. The tunnelling involves _______. d) Movement of electrons from the n-side of the conduction band to the p-side of the valance band
a) Acceleration of electron in p side
b) Positive slope characteristic of the diode
c) Charge distribution management in both the bands
d) Movement of electrons from the n-side of the conduction band to the p-side of the valance band
Q9. The tunnelling phenomenon is also known as _______.
a) Esaki phenomena
b) Auto electric phenomenon
c) Auto electronic phenomenon
d) Bulk semiconductor phenomenon
Q10. The Tunnel diode is best suited for _______. c) Amplifiers
a) Rectifiers
b) Oscillators
c) Amplifiers
d) Amplitude limiters
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